LSE65R180HT - описание и поиск аналогов

 

LSE65R180HT. Аналоги и основные параметры

Наименование производителя: LSE65R180HT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 146 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 33 ns

Cossⓘ - Выходная емкость: 64 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO-263

Аналог (замена) для LSE65R180HT

- подборⓘ MOSFET транзистора по параметрам

 

LSE65R180HT даташит

 ..1. Size:1171K  lonten
 lsb65r180ht lsc65r180ht lsd65r180ht lse65r180ht lsf65r180ht lsnc65r180ht.pdf pdf_icon

LSE65R180HT

LSB65R180HT/ LSC65R180HT/ LSD65R180HT / LSE65R180HT/ LSF65R180HT/LSNC65R180HT LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q

 5.1. Size:1188K  lonten
 lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf pdf_icon

LSE65R180HT

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GF LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q 39nC g,typ a

 5.2. Size:1136K  lonten
 lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf pdf_icon

LSE65R180HT

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GT LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. RDS(on),max 0.18 I 60A The resulting device has extremely low on DM Q 39nC resistance, making it especially suitable for g,typ app

 7.1. Size:1176K  lonten
 lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf pdf_icon

LSE65R180HT

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HT LonFET Lonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 1.5 DS(on),max device has extremely low on resistance, making it I 9A DM especially suitable for applications which re

ПОКАЗАТЬ ЕЩЁ

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History: KHB1D9N60D | AP3989R | IRLML6402GPBF

 

 

 

 

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