LSG60R1K4HT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSG60R1K4HT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.8 nC
trⓘ - Время нарастания: 26.8 ns
Cossⓘ - Выходная емкость: 74.8 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-252
Аналог (замена) для LSG60R1K4HT
LSG60R1K4HT Datasheet (PDF)
lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdf
LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HTLonFETLonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 1.4DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which require Q 5.8nC
lsg60r2k5ht lsh60r2k5ht.pdf
LSG60R2K5HT/ LSH60R2K5HTLonFETLonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5.7ADMespecially suitable for applications which require Q 4.7nCg,typsuperior pow
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf
LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf
LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf
LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab
lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf
LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n
lsdn60r950ht lsg60r950ht lsh60r950ht.pdf
LSDN60R950HT/LSG60R950HT/ LSH60R950HTLonFETLonten N-channel 600V, 4A, 950m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The R 950mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 7.6nCg,typapplications which require
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280htlse60r280ht lsb60r280ht.pdf
LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl
lsd60r240ht lsg60r240ht lsh60r240ht lsf60r240ht lse60r240ht.pdf
LSD60R240HT/LSG60R240HT/LSH60R240HT/LSF60R240HT/ LSE60R240HTLonFETLonten N-channel 600V, 17A, 0.24 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.24DS(on),maxdevice has extremely low on resistance, making it I 50ADMespecially suitable for applications which
lsd60r290hf lsg60r290hf lsh60r290hf lsc60r290hf lsf60r290hf lse60r290hf.pdf
LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli
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Список транзисторов
Обновления
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