LSG60R1K4HT - описание и поиск аналогов

 

LSG60R1K4HT. Аналоги и основные параметры

Наименование производителя: LSG60R1K4HT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26.8 ns

Cossⓘ - Выходная емкость: 74.8 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO-252

Аналог (замена) для LSG60R1K4HT

- подборⓘ MOSFET транзистора по параметрам

 

LSG60R1K4HT даташит

 ..1. Size:1103K  lonten
lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdfpdf_icon

LSG60R1K4HT

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT LonFET Lonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 1.4 DS(on),max device has extremely low on resistance, making it I 9A DM especially suitable for applications which require Q 5.8nC

 8.1. Size:910K  lonten
lsg60r2k5ht lsh60r2k5ht.pdfpdf_icon

LSG60R1K4HT

LSG60R2K5HT/ LSH60R2K5HT LonFET Lonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 2.5 DS(on),max device has extremely low on resistance, making it I 5.7A DM especially suitable for applications which require Q 4.7nC g,typ superior pow

 8.2. Size:1260K  lonten
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdfpdf_icon

LSG60R1K4HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Lonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which

 8.3. Size:1293K  lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdfpdf_icon

LSG60R1K4HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/ LSF60R280HT/ LSE60R280HT/ LSB60R280HT LonFET Lonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appl

Другие MOSFET... LSF65R570GT , LSF70R380GT , LSF70R450GT , LSF70R640GT , LSF80R350GT , LSF80R680GT , LSF80R980GT , LSG50R160HT , IRF530 , LSG60R240HT , LSG60R280HT , LSG60R290HF , LSG60R2K5HT , LSG60R380HT , LSG60R650HT , LSG60R950HT , LSG65R1K5HT .

History: AGM30P08AP | LNH05R230 | LSF80R980GT | LSF80R680GT

 

 

 

 

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