LSGC04R029 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LSGC04R029
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 62.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 22.5 ns
Cossⓘ - Выходная емкость: 1130 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
Тип корпуса: TO-220
Аналог (замена) для LSGC04R029
LSGC04R029 Datasheet (PDF)
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
lsgn04r025 lsgc04r025.pdf

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
lsgn03r020 lsgg03r020 lsgc03r020.pdf

LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf
Другие MOSFET... LSG70R380GT , LSG70R450GT , LSG70R640GT , LSG80R2K8GT , LSG80R680GT , LSG80R980GT , LSGC03R020 , LSGC04R025 , RU6888R , LSGC04R035 , LSGC06R034W3 , LSGC085R041W3 , LSGC085R065W3 , LSGC10R080W3 , LSGC15R085W3 , LSGD04R035 , LSGD10R080W3 .
History: VS3606AT | TSM802CQ | AP83T03GJ-HF | NTMFS4825NFET1G | AD4N65S | DMTH3004LK3 | NTF3055-160T3LF
History: VS3606AT | TSM802CQ | AP83T03GJ-HF | NTMFS4825NFET1G | AD4N65S | DMTH3004LK3 | NTF3055-160T3LF



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