Справочник MOSFET. LSGN03R020

 

LSGN03R020 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSGN03R020
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42.14 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 18 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 1830 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: DFN5X6
     - подбор MOSFET транзистора по параметрам

 

LSGN03R020 Datasheet (PDF)

 ..1. Size:749K  1
 lsgn03r020.pdf pdf_icon

LSGN03R020

LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf

 ..2. Size:749K  lonten
 lsgn03r020 lsgg03r020 lsgc03r020.pdf pdf_icon

LSGN03R020

LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf

 9.1. Size:1291K  1
 lsgn085r065w3.pdf pdf_icon

LSGN03R020

LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10

 9.2. Size:746K  1
 lsgn04r025.pdf pdf_icon

LSGN03R020

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

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History: 2N7002L | 8810 | HSS3401A | WMK53N65C4 | 2SK2394 | FDMC86012 | NCE70T900K

 

 
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