Справочник MOSFET. LSGN04R029

 

LSGN04R029 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSGN04R029
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22.5 ns
   Cossⓘ - Выходная емкость: 1130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
   Тип корпуса: PPAK5X6
     - подбор MOSFET транзистора по параметрам

 

LSGN04R029 Datasheet (PDF)

 ..1. Size:1070K  1
 lsgn04r029.pdf pdf_icon

LSGN04R029

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit

 ..2. Size:1070K  lonten
 lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf pdf_icon

LSGN04R029

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit

 5.1. Size:746K  1
 lsgn04r025.pdf pdf_icon

LSGN04R029

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

 5.2. Size:746K  lonten
 lsgn04r025 lsgc04r025.pdf pdf_icon

LSGN04R029

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

ПОКАЗАТЬ ЕЩЁ

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History: SI9945BDY | NVTFS002N04C

 

 
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