Справочник MOSFET. LSH60R1K4HT

 

LSH60R1K4HT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSH60R1K4HT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 26.8 ns
   Cossⓘ - Выходная емкость: 74.8 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для LSH60R1K4HT

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSH60R1K4HT Datasheet (PDF)

 ..1. Size:1103K  lonten
 lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdf pdf_icon

LSH60R1K4HT

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HTLonFETLonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 1.4DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which require Q 5.8nC

 8.1. Size:910K  lonten
 lsg60r2k5ht lsh60r2k5ht.pdf pdf_icon

LSH60R1K4HT

LSG60R2K5HT/ LSH60R2K5HTLonFETLonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5.7ADMespecially suitable for applications which require Q 4.7nCg,typsuperior pow

 8.2. Size:1260K  lonten
 lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf pdf_icon

LSH60R1K4HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.3. Size:1293K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf pdf_icon

LSH60R1K4HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl

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History: NTD6415AN-1G | SI4408DY | 13N50G-TQ2-R

 

 
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