LSH65R570GT - описание и поиск аналогов

LSC65R570GT/LSD65R570GT/LSG65R570GT/ LSH65R570GT/ LSE65R570GT / LSF65R570GT LonFET Lonten N-channel 650V, 7A, 0.57 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.57 device has extremely low on resistance, making it IDM 21A especially suitable for ap

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HT LSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it

LSC65R290HF/LSG65R290HF/LSH65R290HF/ LSD65R290HF/LSF65R290HF/ LSE65R290HF LonFET Lonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.29 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appli

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HT LonFET Lonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 1.5 DS(on),max device has extremely low on resistance, making it I 9A DM especially suitable for applications which re

LSD65R930GT/LSG65R930GT/ LSH65R930GT LonFET Lonten N-channel 650V, 4A, 930m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The R 930m DS(on),max resulting device has extremely low on I 12A DM resistance, making it especially suitable for Q 13.6nC g,typ applications which require

LSG65R2K5GT/ LSH65R2K5GT LonFET Lonten N-channel 650V, 2A, 2.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 2.5 DS(on),max device has extremely low on resistance, making it I 5A DM especially suitable for applications which require Q 9.5nC g,typ superior power d

LSD65R280HT/LSG65R280HT/LSH65R280HT /LSF65R280HT/LSE65R280HT/LSC65R280HT LonFET Lonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for applic

LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Lonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.65 DS(on),max device has extremely low on resistance, making it I 21A DM especially suitable for appl

LSC65R380GT/LSD65R380GT/LSH65R380GT/ LSE65R380GT/LSF65R380GT/LSG65R380GT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applic

LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT LonFET Lonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for applications which

LSDN65R950HT/LSG65R950HT/ LSH65R950HT LonFET Lonten N-channel 650V, 4A, 950m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 950m device has extremely low on resistance, making it IDM 12A especially suitable for applications which require Qg,typ 7.6nC