AO3400MI-MS - описание и поиск аналогов

www.msksemi.com AO3400MI-MS Semiconductor Compiance SOT-23 FEATURE High dense cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE APPLICATION 3. DRAIN Load/Power Switching Interfacing Switching Equivalent Circuit I V(BR)DSS RDS(on)MAX D 35m @ 10V 40m @4.5V 30 V 5.8A 52m @2.5V Maximum ratin

AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3400 N-Channel 30V(D-S) MOSFET DESCRIPTION The 3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 1

AO3400C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

AO3400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.8A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400 AO3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3400 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 4.8 A (VGS = 10V) operation with gate voltages as low as 2.5V. This RDS(ON)

AO3400 Rev.B Oct.-2017 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3400(AO3400) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 3 ID =5.8 A(VGS =10V) RDS(ON) 28m (VGS = 10V) 12 RDS(ON) 33m (VGS =4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 52m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maxim

SMD Type MOSFET N-Channel MOSFET AO3400A (KO3400A) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) 1 2 RDS(ON) 26.5m (VGS = 10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 32m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V) 1. Gate 2. Source 3. Drain D D G G S S Absolute

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3400 (KO3400) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 3 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) 1 2 RDS(ON) 33m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 52m (VGS = 2.5V) D +0.1 1.9 -0.2 1. Gate 2. Source G S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Sy

SMD Type MOSFET N-Channel MOSFET AO3400A (KO3400A) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) RDS(ON) 26.5m (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 32m (VGS = 4.5V) +0.1 1.9 -0.2 RDS(ON) 48m (VGS = 2.5V) 1. Gate 2. Source D D 3. Drain G G S S Absol

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) SOT-23 Unit mm +0.1 Features 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) = 30V 3 ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) 1 2 RDS(ON) 33m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 52m (VGS = 2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Ab

R UMW UMW AO3400A UMW AO3400A N-Channel Enhancement Mode Features SOT 23 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current TA=25 5.8 ID

AO3400A MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit Drain-Source Voltage BV 30 V DSS Gate- Source Voltage V +12 V GS Drain Current (continuous) 5.8 A I D Drain Current (pulsed) I 30 A DM Total Device Dissipat

Plastic-Encapsulate Mosfets AO3400 FEATURES N-Channel MOSFET The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook c

AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N- VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. ID 5.2 A The AO3400A meet the RoHS and Green Product requirement with full function reliability approve

AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

N-Channel Enhancement Mode MOSFET Feature SC-59 30V/5.8A, RDS(ON) = 35m (MAX) @VGS = 10V. 3 RDS(ON) =40m (MAX) @VGS = 4.5V. RDS(ON) =55m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . 2 Reliable and Rugged. 1 SC-59 for Surface Mount Package. Applications 1 Gate 2 Source 3 Drain Power Management Portable Equipment and

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate Mosfets AO3400 N-Channel Mosfet Features 30V VDS 5.7A I (at VGS=10V D (at VGS=10V

AO3400 AO3400 AO3400 AO3400 SI2305 SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor AO3400 AO3400 AO3400 AO3400 AO3400 FEATURE High dense cell design for extremely low RDS(ON) Excepti

AO3400 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

Description The AO3400S combines advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features VDS=30V, ID=5.1A RDS(ON)