www.msksemi.comAO3415AI-MSSemiconductor CompianceDVDS -20VI (at V =-4.5V) -4AD GSR (at V = -4.5V)

AO3415A20V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3415A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01+0.11.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. SourceD3. Dra

SMD Type MOSFETP-Channel MOSFETAO3415AS (KO3415AS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features 3 VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1D RDS(ON) 54m (VGS =-2.5V)+0.11.9 -0.2 RDS(ON) 75m (VGS =-1.8V) ESD Rating: 3000V HBMG1. Gate2. Source3. Dra

SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-5 A (VGS =-4.5V)1 2 RDS(ON) 43m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 55m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. Source

RUMW UMW AO3415ASOT-23 Plastic-Encapsulate MOSFETSUMW AO3415A P-Channel 20-V(D-S) MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 50m@-4.5V-20V 60m@-2.5V-4A1. GATE 73m@-1.8V2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G AFHVS Maximum ratings

AO3415Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS