WPM2015-MS - параметры транзистора MOSFET, его аналоги, datasheet

WPM2015-MS Datasheet (PDF)

..1. Size:284K msksemi
wpm2015-ms.pdf pdf_icon

www.msksemi.comWPM2015-MSSemiconductorCompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURETrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-So

6.1. Size:868K cn vbsemi
wpm2015-3-tr.pdf pdf_icon

WPM2015-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

7.1. Size:807K willsemi
wpm2015.pdf pdf_icon

WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D

7.2. Size:84K tysemi
wpm2015.pdf pdf_icon

Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s