WPM2341-MS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WPM2341-MS
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
Тип корпуса: SOT23
Аналог (замена) для WPM2341-MS
WPM2341-MS Datasheet (PDF)
wpm2341-ms.pdf
www.msksemi.comWPM2341-MSSemiconductor CompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURE TrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-Sour
wpm2341.pdf
WPM2341WPM2341P-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta
wpm2341a.pdf
WPM2341AWPM2341AP-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por
wpm2341a.pdf
Product specificationWPM2341AP-Channel Enhancement Mode MosfetFeatures Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P
wpm2341.pdf
WPM2341P-channel Enhancement Mode Power MOSFETFEATURESPWM applicationsLoad switchPower managementMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -3 APD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERIST
wpm2341a-3-tr.pdf
WPM2341A-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918