Справочник MOSFET. FCH077N65F-F085

 

FCH077N65F-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCH077N65F-F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 481 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 54 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 126 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 5629 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.077 Ohm
   Тип корпуса: TO247

 Аналог (замена) для FCH077N65F-F085

 

 

FCH077N65F-F085 Datasheet (PDF)

 0.1. Size:417K  onsemi
 fch077n65f-f085.pdf

FCH077N65F-F085 FCH077N65F-F085

MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 54 A, 77 mWFCH077N65F-F085DescriptionSuperFET II MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu

 4.1. Size:695K  fairchild semi
 fch077n65f f085.pdf

FCH077N65F-F085 FCH077N65F-F085

December 2014FCH077N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 m DFeatures Typical RDS(on) = 68 m at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing

 4.2. Size:1384K  fairchild semi
 fch077n65f.pdf

FCH077N65F-F085 FCH077N65F-F085

December 2014FCH077N65FN-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 68 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 126 nC

 4.3. Size:646K  onsemi
 fch077n65f.pdf

FCH077N65F-F085 FCH077N65F-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFT7N90

 

 
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