Справочник MOSFET. FCPF190N65S3R0L

 

FCPF190N65S3R0L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF190N65S3R0L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 33 nC
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FCPF190N65S3R0L

 

 

FCPF190N65S3R0L Datasheet (PDF)

 0.1. Size:271K  onsemi
fcpf190n65s3r0l.pdf

FCPF190N65S3R0L
FCPF190N65S3R0L

FCPF190N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 17 A, 190 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(on) MAX ID MAXcharge performance. This advanced technology is tailor

 2.1. Size:283K  onsemi
fcpf190n65s3l1.pdf

FCPF190N65S3R0L
FCPF190N65S3R0L

FCPF190N65S3L1Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 14 A, 190 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

 4.1. Size:752K  fairchild semi
fcpf190n65fl1.pdf

FCPF190N65S3R0L
FCPF190N65S3R0L

September 2014FCPF190N65FL1N-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 168 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

 4.2. Size:977K  onsemi
fcpf190n65fl1.pdf

FCPF190N65S3R0L
FCPF190N65S3R0L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.3. Size:247K  inchange semiconductor
fcpf190n65fl1.pdf

FCPF190N65S3R0L
FCPF190N65S3R0L

isc N-Channel MOSFET Transistor FCPF190N65FL1FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

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