FDB075N15A-F085 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDB075N15A-F085
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 333 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 513 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: TO263
Аналог (замена) для FDB075N15A-F085
FDB075N15A-F085 Datasheet (PDF)
fdb075n15a-f085.pdf

FDB075N15A-F085N-Channel Power Trench MOSFET DD150V, 110A, 7.5mFeaturesG Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A GS UIS CapabilityTO-263S RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator
fdb075n15a f085.pdf

October 2013FDB075N15A_F085N-Channel Power Trench MOSFET150V, 110A, 7.5m DDFeatures Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta
fdp075n15a f102 fdb075n15a.pdf

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc
fdp075n15a fdb075n15a.pdf

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges
Другие MOSFET... FDB0170N607L , FDB0190N807L , FDB0260N1007L , FDB0300N1007L , FDB045AN08A0-F085 , FDB0630N1507L , FDB0690N1507L , FDB070AN06A0-F085 , RFP50N06 , FDB14AN06LA0-F085 , FDB1D7N10CL7 , FDB2532-F085 , FDB2552_F085 , FDB28N30 , FDB3632-F085 , FDB3652-F085 , FDB3672-F085 .
History: STB80NF55L-06 | SI7121DN | MTB06N03V8 | SFG10R75BCF | IRF7324TR | HRP30N04K | KMB6D0DN35QB
History: STB80NF55L-06 | SI7121DN | MTB06N03V8 | SFG10R75BCF | IRF7324TR | HRP30N04K | KMB6D0DN35QB



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