FDB86363-F085 - аналоги, параметры транзистора

FDB86363-F085 даташит

..1. Size:265K onsemi
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MOSFET - POWERTRENCH), N-Channel 80 V, 110 A, 2.4 mW FDB86363-F085 Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 A www.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS Capability N-Channel AEC-Q101 Qualified and PPAP Capable (Pin 2) This Device is Pb-Free, Halide Free and is RoHS Compliant D Applications Automotive Engine Control

6.1. Size:486K fairchild semi
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June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co

7.1. Size:465K fairchild semi
fdb86366 f085.pdf pdf_icon

December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In

7.2. Size:365K fairchild semi
fdb86360 f085.pdf pdf_icon

January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c