FDD4141-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD4141-F085
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 69 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 36 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 360 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0123 Ohm
Тип корпуса: TO252
Аналог (замена) для FDD4141-F085
FDD4141-F085 Datasheet (PDF)
fdd4141-f085.pdf
FDD4141-F085P-Channel PowerTrench MOSFET-40V, -50A, 12.3mGeneral DescriptionFeaturesThis P-Channel MOSFET has been produced using ON Semiconductors proprietary PowerTrench technology to Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7Adeliver low rDS(on) and optimized Bvdss capability to offer Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Asuperior performance be
fdd4141 f085.pdf
November 2013FDD4141_F085P-Channel PowerTrench MOSFET -40V, -50A, 12.3mFeaturesGeneral Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Adeliver low rDS(on) and optimized Bvdss capability to offer
fdd4141.pdf
July 2007FDD4141tmP-Channel PowerTrench MOSFET -40V, -50A, 12.3mFeatures General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Adeliver low rDS(on) and optimized Bvdss capability to offer Hig
fdd4141.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd4141.pdf
FDD4141www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle
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