Справочник MOSFET. FDD4141-F085

 

FDD4141-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD4141-F085
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 36 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0123 Ohm
   Тип корпуса: TO252

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FDD4141-F085 Datasheet (PDF)

 ..1. Size:326K  onsemi
 fdd4141-f085.pdf

FDD4141-F085 FDD4141-F085

FDD4141-F085P-Channel PowerTrench MOSFET-40V, -50A, 12.3mGeneral DescriptionFeaturesThis P-Channel MOSFET has been produced using ON Semiconductors proprietary PowerTrench technology to Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7Adeliver low rDS(on) and optimized Bvdss capability to offer Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Asuperior performance be

 7.1. Size:343K  fairchild semi
 fdd4141 f085.pdf

FDD4141-F085 FDD4141-F085

November 2013FDD4141_F085P-Channel PowerTrench MOSFET -40V, -50A, 12.3mFeaturesGeneral Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Adeliver low rDS(on) and optimized Bvdss capability to offer

 7.2. Size:237K  fairchild semi
 fdd4141.pdf

FDD4141-F085 FDD4141-F085

July 2007FDD4141tmP-Channel PowerTrench MOSFET -40V, -50A, 12.3mFeatures General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Adeliver low rDS(on) and optimized Bvdss capability to offer Hig

 7.3. Size:451K  onsemi
 fdd4141.pdf

FDD4141-F085 FDD4141-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:891K  cn vbsemi
 fdd4141.pdf

FDD4141-F085 FDD4141-F085

FDD4141www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

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