FDD4243-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD4243-F085
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 21 nC
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 165 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
Тип корпуса: TO252
Аналог (замена) для FDD4243-F085
FDD4243-F085 Datasheet (PDF)
fdd4243-f085.pdf
FDD4243-F085P-Channel PowerTrench MOSFET-40V, -14A, 64mFeaturesApplications Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely lowrDS(on) RoHS Compliant Qualified to AEC Q1012010 Semiconduct
fdd4243.pdf
November 2007FDD424340V P-Channel PowerTrench MOSFET -40V, -14A, 44mFeatures General Description Max rDS(on) = 44m at VGS = -10V, ID = -6.7AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5Adeliver low rDS(on) and optimized Bvdss capability to offer High p
fdd4243 f085.pdf
December 2010FDD4243_F085P-Channel PowerTrench MOSFET-40V, -14A, 64m ApplicationsFeatures Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Fairchild Semicond
fdd4243.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd4243.pdf
FDD4243www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918