FDD4685-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD4685-F085
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 32 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 260 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
Тип корпуса: TO252
Аналог (замена) для FDD4685-F085
FDD4685-F085 Datasheet (PDF)
fdd4685-f085.pdf
FDD4685-F085P-Channel PowerTrench MOSFET-40 V, -32 A, 35 mFeatures Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A UIS CapabilityD RoHS Compliant G Qualified to AEC Q101SApplicationsD-PAKTO-252(TO-252) Inverter Power Supplies
fdd4685 f085.pdf
December 2010FDD4685_F085P-Channel PowerTrench MOSFET-40V, -32A, 35m ApplicationsFeatures Typ rDS(on) = 23m at VGS = -10V, ID = -8.4A Inverter Typ rDS(on) = 30m at VGS = -4.5V, ID = -7A Power Supplies Typ Qg(TOT) = 19nC at VGS = -5V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Fairchild Semiconduct
fdd4685.pdf
October 2006FDD4685tm40V P-Channel PowerTrench MOSFET 40V, 32A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 8.4AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 35m at VGS = 4.5V, ID = 7Adeliver low rDS(on) and good switching characteristic of
fdd4685.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd4685.pdf
FDD4685www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle
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