Справочник MOSFET. FDD86367-F085

 

FDD86367-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD86367-F085
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 227 W
   Предельно допустимое напряжение сток-исток |Uds|: 80 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 68 nC
   Время нарастания (tr): 49 ns
   Выходная емкость (Cd): 814 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0042 Ohm
   Тип корпуса: TO252

 Аналог (замена) для FDD86367-F085

 

 

FDD86367-F085 Datasheet (PDF)

 ..1. Size:421K  onsemi
fdd86367-f085.pdf

FDD86367-F085
FDD86367-F085

FDD86367-F085N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 mFeatures Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 6.1. Size:352K  fairchild semi
fdd86367 f085.pdf

FDD86367-F085
FDD86367-F085

May 2015FDD86367_F085N-Channel PowerTrench MOSFET80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor DriversForc

 6.2. Size:403K  onsemi
fdd86367.pdf

FDD86367-F085
FDD86367-F085

MOSFET N-Channel,POWERTRENCH)80 V, 100 A, 4.2 mWFDD86367Featureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 AD UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantGApplications PowerTrain ManagementS Solenoid and Motor DriversN-Channel Int

 7.1. Size:456K  fairchild semi
fdd86369 f085.pdf

FDD86367-F085
FDD86367-F085

May 2015FDD86369_F085N-Channel PowerTrench MOSFET80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 7.2. Size:1055K  onsemi
fdd86369.pdf

FDD86367-F085
FDD86367-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:440K  onsemi
fdd86369-f085.pdf

FDD86367-F085
FDD86367-F085

FDD86369-F085N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 mFeatures Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 7.4. Size:286K  inchange semiconductor
fdd86369.pdf

FDD86367-F085
FDD86367-F085

isc N-Channel MOSFET Transistor FDD86369FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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