BUK7M10-40E. Аналоги и основные параметры
Наименование производителя: BUK7M10-40E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 62 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.7 ns
Cossⓘ - Выходная емкость: 184 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: SOT1210
Аналог (замена) для BUK7M10-40E
- подборⓘ MOSFET транзистора по параметрам
BUK7M10-40E даташит
buk7m10-40e.pdf
BUK7M10-40E N-channel 40 V, 10 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
buk7m15-40h.pdf
BUK7M15-40H N-channel 40 V, 15.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut
buk7m15-60e.pdf
BUK7M15-60E N-channel 60 V, 15 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
buk7m11-40h.pdf
BUK7M11-40H N-channel 40 V, 11.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut
Другие IGBT... BUK7K134-100E, BUK7K15-80E, BUK7K17-80E, BUK7K23-80E, BUK7K29-100E, BUK7K32-100E, BUK7K45-100E, BUK7K89-100E, 10N65, BUK7M11-40H, BUK7M12-40E, BUK7M12-60E, BUK7M15-40H, BUK7M15-60E, BUK7M17-80E, BUK7M19-60E, BUK7M20-40H
History: TPC8221-H
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Список транзисторов
Обновления
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
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