BUK7S0R7-40H. Аналоги и основные параметры

Наименование производителя: BUK7S0R7-40H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 425 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

Cossⓘ - Выходная емкость: 2363 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0007 Ohm

Тип корпуса: SOT1235

Аналог (замена) для BUK7S0R7-40H

- подборⓘ MOSFET транзистора по параметрам

 

BUK7S0R7-40H даташит

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BUK7S0R7-40H

BUK7S0R7-40H N-channel 40 V, 0.7 m standard level MOSFET in LFPAK88 2 May 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliabi

 7.1. Size:313K  nxp
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BUK7S0R9-40H N-channel 40 V, 0.9 m standard level MOSFET in LFPAK88 2 May 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliabi

 9.1. Size:315K  nxp
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BUK7S0R7-40H

BUK7S1R0-40H N-channel 40 V, 1.0 m standard level MOSFET in LFPAK88 26 April 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reli

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