BUK9M156-100E. Аналоги и основные параметры
Наименование производителя: BUK9M156-100E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.3 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.8 ns
Cossⓘ - Выходная емкость: 42 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: SOT1210
Аналог (замена) для BUK9M156-100E
- подборⓘ MOSFET транзистора по параметрам
BUK9M156-100E даташит
buk9m156-100e.pdf
BUK9M156-100E N-channel 100 V, 156 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Rep
buk9m15-60e.pdf
BUK9M15-60E N-channel 60 V, 15 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit
buk9m15-40h.pdf
BUK9M15-40H N-channel 40 V, 15.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotiv
buk9m10-30e.pdf
BUK9M10-30E N-channel 30 V, 10 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit
Другие IGBT... BUK9M10-30E, BUK9M11-40E, BUK9M11-40H, BUK9M120-100E, BUK9M12-60E, BUK9M14-40E, BUK9M15-40H, BUK9M15-60E, IRFB4110, BUK9M17-30E, BUK9M19-60E, BUK9M20-40H, BUK9M24-40E, BUK9M24-60E, BUK9M28-80E, BUK9M34-100E, BUK9M35-80E
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Список транзисторов
Обновления
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
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