NX3020NAKS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NX3020NAKS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.26 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.18 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 2.6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
Тип корпуса: SOT363
Аналог (замена) для NX3020NAKS
NX3020NAKS Datasheet (PDF)
nx3020naks.pdf

NX3020NAKS30 V, 180 mA dual N-channel Trench MOSFET11 November 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low
nx3020nakw.pdf

NX3020NAKW30 V, 180 mA N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag
nx3020nak.pdf

NX3020NAK30 V, single N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold volt
nx3020nakv.pdf

NX3020NAKV30 V, 200 mA dual N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flatlead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection
Другие MOSFET... GAN063-650WSA , NX138AK , NX138AKS , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , NX3008PBKMB , AO4407 , NX3020NAKV , NX3020NAKW , NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE , PMCM4401UPE , PMCM4402UPE .
History: HGP098N10AL | AFP1073 | IPB60R120P7 | KI1555DL | 2SK544 | PHK12NQ03LT | TPD65R380C
History: HGP098N10AL | AFP1073 | IPB60R120P7 | KI1555DL | 2SK544 | PHK12NQ03LT | TPD65R380C



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