PMCM650CUNE - параметры транзистора MOSFET, его аналоги, datasheet

PMCM650CUNE Datasheet (PDF)

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PMCM650CUNE20 V, Common Drain N-channel Trench MOSFETRev. 1.0 8 November 2017 Product data sheet1 Product profile1.1 General descriptionN-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.1.2 Features and benefits Common-drain type for bi-directional current flow L

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PMCM6501UNE20 V, N-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

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PMCM6501VNE12 V, N-channel Trench MOSFET26 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

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PMCM6501UPE20 V, P-channel Trench MOSFET3 July 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha