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PMCM650CUNE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMCM650CUNE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.556 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 96 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: WLCSP6

 Аналог (замена) для PMCM650CUNE

 

 

PMCM650CUNE Datasheet (PDF)

 ..1. Size:398K  nxp
 pmcm650cune.pdf

PMCM650CUNE PMCM650CUNE

PMCM650CUNE20 V, Common Drain N-channel Trench MOSFETRev. 1.0 8 November 2017 Product data sheet1 Product profile1.1 General descriptionN-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.1.2 Features and benefits Common-drain type for bi-directional current flow L

 7.1. Size:384K  nxp
 pmcm6501une.pdf

PMCM650CUNE PMCM650CUNE

PMCM6501UNE20 V, N-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.2. Size:771K  nxp
 pmcm6501vne.pdf

PMCM650CUNE PMCM650CUNE

PMCM6501VNE12 V, N-channel Trench MOSFET26 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

 7.3. Size:378K  nxp
 pmcm6501upe.pdf

PMCM650CUNE PMCM650CUNE

PMCM6501UPE20 V, P-channel Trench MOSFET3 July 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 7.4. Size:360K  nxp
 pmcm6501vpe.pdf

PMCM650CUNE PMCM650CUNE

PMCM6501VPE12 V, P-channel Trench MOSFET10 August 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

 7.5. Size:369K  nxp
 pmcm650vne.pdf

PMCM650CUNE PMCM650CUNE

PMCM650VNE12 V, N-channel Trench MOSFET7 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

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