Справочник MOSFET. PMDPB95XNE2

 

PMDPB95XNE2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDPB95XNE2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.51 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 31 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: SOT1118
     - подбор MOSFET транзистора по параметрам

 

PMDPB95XNE2 Datasheet (PDF)

 ..1. Size:720K  nxp
pmdpb95xne2.pdfpdf_icon

PMDPB95XNE2

PMDPB95XNE230 V, dual N-channel Trench MOSFET14 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology Leadless medium powe

 4.1. Size:200K  nxp
pmdpb95xne.pdfpdf_icon

PMDPB95XNE2

PMDPB95XNE30 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo

 9.1. Size:879K  nxp
pmdpb55xp.pdfpdf_icon

PMDPB95XNE2

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.2. Size:894K  nxp
pmdpb80xp.pdfpdf_icon

PMDPB95XNE2

PMDPB80XP20 V, dual P-channel Trench MOSFETRev. 1 30 May 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for low voltag

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AP9408GM | CPH6904 | SPP08P06PH | IRFTS8342 | DMN15H310SE | NCE70T1K2R | BF511

 

 
Back to Top

 


 
.