PSMN012-100YL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN012-100YL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 238 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 118 nC
trⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 349 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMN012-100YL
PSMN012-100YL Datasheet (PDF)
psmn012-100yl.pdf
PSMN012-100YLN-channel 100 V, 12 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon
psmn012-100ys.pdf
PSMN012-100YSN-channel 100V 12m standard level MOSFET in LFPAKRev. 04 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren
psmn012-100ys.pdf
PSMN012-100YSN-channel 100V 12m standard level MOSFET in LFPAKRev. 04 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren
psmn012-80ps.pdf
PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
psmn012-60ys.pdf
PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn012-60ms.pdf
PSMN012-60MSN-channel 60 V 12 m standard level MOSFET in LFPAK3319 December 2019 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. This product isdesigned and qualified for use in a wide range of motor, industrial, communications and domesticequipment.2. Features and benefits High efficiency due to low switching and
psmn012-80ps.pdf
PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
psmn012-25ylc.pdf
PSMN012-25YLCN-channel 25 V 12.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 25 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
psmn012-60ys.pdf
PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn012-80bs.pdf
PSMN012-80BSN-channel 80 V 11 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918