PSMN012-100YL datasheet, аналоги, основные параметры
Наименование производителя: PSMN012-100YL 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 238 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 349 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: SOT669
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Аналог (замена) для PSMN012-100YL
- подборⓘ MOSFET транзистора по параметрам
PSMN012-100YL даташит
psmn012-100yl.pdf
PSMN012-100YL N-channel 100 V, 12 m logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon
psmn012-100ys.pdf
PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren
psmn012-100ys.pdf
PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren
psmn012-80ps.pdf
PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low
Другие IGBT... PMV88ENEA, PMV90ENE, PMZ600UNEL, PMZ950UPEL, PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, 2SK3568, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL, PSMN015-100YL, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL
History: AGM6014AP | 2SK3673-01MR | PSMN019-100YL
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