PSMN1R5-25MLH - Даташиты. Аналоги. Основные параметры

PSMN1R5-25MLH N-channel 25 V, 1.81 m , 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

PSMN1R5-40PS N-channel 40 V 1.6 m standard level MOSFET in TO220. Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High e

PSMN1R5-30YLC N-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

PSMN1R5-40PS N-channel 40 V 1.6 m standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching and conduction losses Robus

PSMN1R5-30YLC N-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

PSMN1R5-30BLE N-channel 30 V 1.5 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe

PSMN1R5-40YSD N-channel 40 V, 1.5 m , 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

isc N-Channel MOSFET Transistor PSMN1R5-40PS FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor PSMN1R5-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor PSMN1R5-40ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general