PSMN2R8-40YSD datasheet, аналоги, основные параметры
Наименование производителя: PSMN2R8-40YSD 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7.7 ns
Cossⓘ - Выходная емкость: 908 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: SOT669
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Аналог (замена) для PSMN2R8-40YSD
- подборⓘ MOSFET транзистора по параметрам
PSMN2R8-40YSD даташит
psmn2r8-40ysd.pdf
PSMN2R8-40YSD N-channel 40 V, 2.8 m , 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 Product data sheet 1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn2r8-40ps.pdf
PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET Rev. 01 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
psmn2r8-40ps.pdf
PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduct
psmn2r8-40bs.pdf
PSMN2R8-40BS N-channel 40 V 2.9 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie
Другие IGBT... PSMN1R8-30MLH, PSMN1R9-40YSD, PSMN2R0-25MLD, PSMN2R0-25YLD, PSMN2R0-40YLD, PSMN2R0-60PSR, PSMN2R2-40YSD, PSMN2R5-40YLD, RU7088R, PSMN3R2-40YLD, PSMN3R3-40MLH, PSMN3R3-40MSH, PSMN3R5-25MLD, PSMN3R5-40YSD, PSMN3R9-100YSF, PSMN4R1-60YL, PSMN5R2-60YL
History: DHI16N06
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