FDMS86581. Аналоги и основные параметры

Наименование производителя: FDMS86581

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 281 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm

Тип корпуса: POWER56

Аналог (замена) для FDMS86581

- подборⓘ MOSFET транзистора по параметрам

 

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие IGBT... FDMS4D5N08LC, FDMS86180, FDMS86181, FDMS86182, FDMS86183, FDMS86368-F085, FDMS86369-F085, FDMS86381-F085, IRF9540N, FDMS8D8N15C, FDMT80040DC, FDN028N20, FDN304P2, FDN5632N-F085, FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D