FDP2710-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDP2710-F085
Маркировка: FDP2710
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 403 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 78 nC
Время нарастания (tr): 183 ns
Выходная емкость (Cd): 425 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.047 Ohm
Тип корпуса: TO-220
Аналог (замена) для FDP2710-F085
FDP2710-F085 Datasheet (PDF)
fdp2710-f085.pdf
FDP2710-F085N-Channel PowerTrench MOSFET250V, 50A, 47m General DescriptionThis N-Channel MOSFET is produced using ON Semi-Features conductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50Ayet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10VAppl
fdp2710.pdf
November 2007FDP2710tm250V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p
fdp2710 f085.pdf
February 2010FDP2710_F085N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General DescriptionThis N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductors advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10Vespecially tailored to minimize the on-state resistance and yet maintain superior switc
fdp2710.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp2710.pdf
isc N-Channel MOSFET Transistor FDP2710FEATURESWith TO-220 packagingDrain Source Voltage-: V 250VDSSStatic drain-source on-resistance:RDS(on) 42.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
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