FDS8984-F085 - параметры транзистора MOSFET, его аналоги, datasheet

FDS8984-F085 Datasheet (PDF)

..1. Size:423K onsemi
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FDS8984-F085N-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate c

6.1. Size:850K cn vbsemi
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FDS8984-NLwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

7.1. Size:384K fairchild semi
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May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

7.2. Size:440K fairchild semi
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Fabruary 2010FDS8984_F085tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been opti