Справочник MOSFET. FQB5N60CTM_WS

 

FQB5N60CTM_WS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB5N60CTM_WS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для FQB5N60CTM_WS

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB5N60CTM_WS Datasheet (PDF)

 ..1. Size:578K  onsemi
 fqb5n60ctm ws.pdf pdf_icon

FQB5N60CTM_WS

June 2015FQB5N60CTM_WSN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Features Description 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET isproduced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 15 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF)technology

 3.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQB5N60CTM_WS

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored

 7.1. Size:553K  fairchild semi
 fqb5n60 fqi5n60.pdf pdf_icon

FQB5N60CTM_WS

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h

 7.2. Size:551K  fairchild semi
 fqb5n60tm.pdf pdf_icon

FQB5N60CTM_WS

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQA13N50C-F109 , FQA13N80-F109 , FQA6N90C-F109 , FQA7N80C-F109 , FQA8N90C-F109 , FQA90N15-F109 , FQA9N90_F109 , FQA9N90C_F109 , IRFB31N20D , FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , FQD4P25TM-WS , FQD8P10TM-F085 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 .

History: RU3010H | BUZ11S2FI | JCS12N65CT | LNG06R062 | HAT3032R | R6024ENZ | MMFTN3018W

 

 
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