NTBLS002N08MC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTBLS002N08MC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 238 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 92 nC
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 1950 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: MO299A
Аналог (замена) для NTBLS002N08MC
NTBLS002N08MC Datasheet (PDF)
ntbls002n08mc.pdf
NTBLS002N08MCMOSFET - Power, SingleN-Channel, TOLL80 V, 2 mW, 238 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2 mW @ 10 V80 V 238 ATypical Applications5 mW @ 6
ntbls001n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANTBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.9 mW @ 10 VCompliant60 V422 A1.4 mW @ 6 VApplications
ntbls0d7n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANTBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.75 mW @ 10 VCompliant60 V470 A1.2 mW @ 6 VTypical App
ntbls4d0n15mc.pdf
MOSFET Single N-Channel150 V, 4.4 mW, 187 ANTBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187 ATypical Applications4.9 mW @ 8 V
ntbls1d5n08mc.pdf
MOSFET - Power, SingleN-Channel, TOLLNTBLS1D5N08MC80 V, 1.53 mW, 298 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.53 mW @ 10 VCompliant80 V 298 A3.7 mW @ 6 VApplication
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918