NTBLS0D7N06C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTBLS0D7N06C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 314 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 470 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 57 ns
Cossⓘ - Выходная емкость: 6912 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00075 Ohm
Тип корпуса: H-PSOF8L
Аналог (замена) для NTBLS0D7N06C
NTBLS0D7N06C Datasheet (PDF)
ntbls0d7n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANTBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.75 mW @ 10 VCompliant60 V470 A1.2 mW @ 6 VTypical App
ntbls001n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANTBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.9 mW @ 10 VCompliant60 V422 A1.4 mW @ 6 VApplications
ntbls002n08mc.pdf
NTBLS002N08MCMOSFET - Power, SingleN-Channel, TOLL80 V, 2 mW, 238 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2 mW @ 10 V80 V 238 ATypical Applications5 mW @ 6
ntbls4d0n15mc.pdf
MOSFET Single N-Channel150 V, 4.4 mW, 187 ANTBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187 ATypical Applications4.9 mW @ 8 V
ntbls1d5n08mc.pdf
MOSFET - Power, SingleN-Channel, TOLLNTBLS1D5N08MC80 V, 1.53 mW, 298 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.53 mW @ 10 VCompliant80 V 298 A3.7 mW @ 6 VApplication
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918