NTHL027N65S3HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTHL027N65S3HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 595 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 225 nC
Время нарастания (tr): 38 ns
Выходная емкость (Cd): 190 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0274 Ohm
Тип корпуса: TO-247
Аналог (замена) для NTHL027N65S3HF
NTHL027N65S3HF Datasheet (PDF)
nthl027n65s3hf.pdf
NTHL027N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)
nthl020n090sc1.pdf
MOSFET SiC Power, SingleN-Channel, TO247-3L900 V, 20 mW, 118 ANTHL020N090SC1Featureswww.onsemi.com Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 196 nC)V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (Coss = 296 pF)900 V 28 mW @ 15 V 118 A 100% UIL Tested RoHS CompliantDTypica
nthl020n120sc1.pdf
MOSFET - SiC Power, SingleN-ChannelNTHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 203 nC) Capacitance (Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 28 mW @ 20 V 103 ATypical Applications UPSN-CHANNEL MOSFET DC/DC ConverterD
nthl095n65s3hf.pdf
NTHL095N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 36 A, 95 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 95 mW @ 10 V 36 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc
nthl033n65s3hf.pdf
NTHL033N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 70 A, 33 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 33 mW @ 10 V 70 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc
nthl050n65s3hf.pdf
NTHL050N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 58 A, 50 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 50 mW 58 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced tech
nthl040n65s3f.pdf
NTHL040N65S3FMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advanced
nthl060n090sc1.pdf
MOSFET - SiC Power, SingleN-Channel900 V, 60 mW, 46 ANTHL060N090SC1Features Typ. RDS(on) = 60 mW Ultra Low Gate Charge (typ. QG(tot) = 87 nC)www.onsemi.com Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested These Devices are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAXTypical Applications900 V 84 mW @ 15 V 46 A UPS DC/DC Converte
nthl080n120sc1.pdf
MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFET
nthl080n120sc1a.pdf
MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFE
nthl082n65s3f.pdf
www.onsemi.comNTHL082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)
nthl040n120sc1.pdf
MOSFET - SiC Power, SingleN-Channel1200 V, 40 mW, 60 ANTHL040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 106 nC) Low Effective Output Capacitance (typ. Coss = 140 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 56 mW @ 20 V 60 ATypical Applications UPSN-CHANNEL MOSFE
nthl040n65s3hf.pdf
NTHL040N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to
nthl040n65s3f.pdf
isc N-Channel MOSFET Transistor NTHL040N65S3FFEATURESWith TO-247 packagingLow R
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FCH023N65S3
