NTMFS0D55N03CG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS0D55N03CG
Маркировка: 0D55NG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 199 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 462 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 173 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 6430 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00058 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS0D55N03CG
NTMFS0D55N03CG Datasheet (PDF)
ntmfs0d55n03cg.pdf
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.58 mW, 462 ANTMFS0D55N03CGFeatures Wide SOA to Improve Inrush Current Managementwww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System EfficiencyV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant30 V 0.58 mW @ 1
ntmfs0d8n02p1et1g.pdf
MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
ntmfs0d9n03cgt1g.pdf
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
ntmfs0d8n02p1e.pdf
MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
ntmfs0d9n03cg.pdf
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
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