NTMFS4C290N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS4C290N
Маркировка: 4C290
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 23.6 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 46 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.7 nC
Время нарастания (tr): 34 ns
Выходная емкость (Cd): 574 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00695 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4C290N
NTMFS4C290N Datasheet (PDF)
ntmfs4c290n.pdf
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NTMFS4C290NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 46 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS6.95 mW @ 10 VCompliant30 V 46 A10.8 mW @ 4.5 V
ntmfs4c250n.pdf
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NTMFS4C250NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V30 V 69 ACompliant6.0 mW @ 4.5 VA
ntmfs4c55n.pdf
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NTMFS4C55NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delive
ntmfs4c06n.pdf
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NTMFS4C06NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 VCompliant30 V 69 A6.0 mW @ 4.5 VA
ntmfs4c05nt1g.pdf
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NTMFS4C05NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V30 V 78 A CPU P
ntmfs4c054n.pdf
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NTMFS4C054NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 80 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.54 mW @ 10 V30 V 80 ACompliant3.56 mW @ 4.5 V
ntmfs4c55n.pdf
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NTMFS4C55NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delive
ntmfs4c022n.pdf
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MOSFET Power, Single,N-Channel, SO-8FL30 V, 1.7 mW, 136 ANTMFS4C022NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.7 mW @ 10 V30 VCompliant136 A2.4 mW
ntmfs4c029n.pdf
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NTMFS4C029NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 46 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.88 mW @ 10 VCompliant30 V 46 A9.0 mW @ 4.5 V
ntmfs4c05n.pdf
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NTMFS4C05NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V30 V 78 A CPU P
ntmfs4c10n.pdf
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NTMFS4C10NPower MOSFET30 V, 46 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delive
ntmfs4c020n.pdf
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MOSFET Power, Single,N-Channel, Logic Level,SO-8FL30 V, 0.67 mW, 370 ANTMFS4C020Nwww.onsemi.comFeatures Small Footprint (5x6 mm) for Compact DesignV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses30 V0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices
ntmfs4c09nt1g.pdf
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NTMFS4C09NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.8 mW @ 10 VApplications30 V 52 A8.5 mW @
ntmfs4c03n.pdf
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NTMFS4C03NPower MOSFET30 V, 2.1 mW, 136 A, Single N-Channel,SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.1 mW @ 10 V30 V136 A2.8 mW @
ntmfs4c13n.pdf
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NTMFS4C13NPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications9.1 mW @ 10 V CPU Power Del
ntmfs4c08n.pdf
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NTMFS4C08NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery5.8 mW @ 10
ntmfs4c35n.pdf
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NTMFS4C35NPower MOSFET30 V, 80 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.2 mW @ 10 VApplications30 V 80 A4.0 mW
ntmfs4c025n.pdf
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NTMFS4C025NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V30 V 69 ACompliant4.88 mW @ 4.5 V
ntmfs4c09n.pdf
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NTMFS4C09NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.8 mW @ 10 V30 V 52 ACompliant8.5 mW @ 4.5 VA
ntmfs4c032n.pdf
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NTMFS4C032NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 38 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.35 mW @ 10 VCompliant30 V 38 AApplications1
ntmfs4c027n.pdf
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NTMFS4C027NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant4.8 mW @ 10 V30 V 52 AApplications7.4
ntmfs4c06n.pdf
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NTMFS4C06NPower MOSFET30 V, 69 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant4.0 mW @ 10 VApplications30 V 69 A CPU P
ntmfs4c01n.pdf
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NTMFS4C01NPower MOSFET30 V, 0.9 mW, 303 A, Single N-Channel,SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant0.9 mW @ 10 V30 V303 A1.2 mW @
ntmfs4c028n.pdf
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NTMFS4C028NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.73 mW @ 10 V30 V 52 ACompliant7.0 mW @ 4.5 V
ntmfs4c024n.pdf
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NTMFS4C024NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 78 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.8 mW @ 10 V30 V 78 ACompliant4.0 mW @ 4.5 V
ntmfs4c302n.pdf
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NTMFS4C302NMOSFET Single,N-Channel, Logic Level,SO-8 FL30 V, 1.15 mW, 230 Awww.onsemi.comFeatures Small Footprint (5x6 mm) for Compact DesignV(BR)DSS RDS(on) MAX ID MAX Low RDS(on) to Minimize Conduction Losses1.15 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses30 V230 A1.7 mW @ 4.5 V These Devices are Pb-Free, Halogen Free/BFR Free and a
ntmfs4c59n.pdf
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NTMFS4C59NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.8 mW @ 10 V CPU Power Delivery30 V 52 A8.5 mW
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