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NTMFS5C404N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFS5C404N
   Маркировка: 5C404N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 200 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 378 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 128 nC
   Время нарастания (tr): 113 ns
   Выходная емкость (Cd): 4600 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0007 Ohm
   Тип корпуса: DFN5

 Аналог (замена) для NTMFS5C404N

 

 

NTMFS5C404N Datasheet (PDF)

 ..1. Size:168K  onsemi
 ntmfs5c404n.pdf

NTMFS5C404N NTMFS5C404N

NTMFS5C404NMOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other

 0.1. Size:161K  1
 ntmfs5c404nt3g.pdf

NTMFS5C404N NTMFS5C404N

MOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 ANTMFS5C404NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other

 0.2. Size:168K  1
 ntmfs5c404nltt1g.pdf

NTMFS5C404N NTMFS5C404N

MOSFET Power, Single,N-Channel40 V, 0.67 mW, 370 ANTMFS5C404NLTFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced0.67 mW @ 10 V40 V370 AOptical Inspection1.0 mW @ 4.

 0.3. Size:116K  onsemi
 ntmfs5c404nlt.pdf

NTMFS5C404N NTMFS5C404N

NTMFS5C404NLTPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co

 0.4. Size:74K  onsemi
 ntmfs5c404nl.pdf

NTMFS5C404N NTMFS5C404N

NTMFS5C404NLPower MOSFET40 V, 0.75 mW, 339 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)0.75 mW @ 10 V

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