Справочник MOSFET. NTMFS5C404N

 

NTMFS5C404N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS5C404N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 378 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 113 ns
   Cossⓘ - Выходная емкость: 4600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0007 Ohm
   Тип корпуса: DFN5
     - подбор MOSFET транзистора по параметрам

 

NTMFS5C404N Datasheet (PDF)

 ..1. Size:168K  onsemi
ntmfs5c404n.pdfpdf_icon

NTMFS5C404N

NTMFS5C404NMOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other

 0.1. Size:161K  1
ntmfs5c404nt3g.pdfpdf_icon

NTMFS5C404N

MOSFET Power, Single,N-Channel40 V, 0.7 mW, 378 ANTMFS5C404NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.7 mW @ 10 V 378 AMAXIMUM RATINGS (TJ = 25C unless other

 0.2. Size:168K  1
ntmfs5c404nltt1g.pdfpdf_icon

NTMFS5C404N

MOSFET Power, Single,N-Channel40 V, 0.67 mW, 370 ANTMFS5C404NLTFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced0.67 mW @ 10 V40 V370 AOptical Inspection1.0 mW @ 4.

 0.3. Size:116K  onsemi
ntmfs5c404nlt.pdfpdf_icon

NTMFS5C404N

NTMFS5C404NLTPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ECH8420 | SUN05A25F | OSS60R099HF | KF4N60D | AP99T06AGI-HF | NP80N055KHE | MSQ5N50

 

 
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