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NTMFS6H801NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFS6H801NL
   Маркировка: 6H801L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 90 nC
   trⓘ - Время нарастания: 99 ns
   Cossⓘ - Выходная емкость: 657 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
   Тип корпуса: DFN5

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NTMFS6H801NL Datasheet (PDF)

 ..1. Size:174K  onsemi
 ntmfs6h801nl.pdf

NTMFS6H801NL NTMFS6H801NL

MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANTMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 3.1. Size:98K  1
 ntmfs6h801nt1g.pdf

NTMFS6H801NL NTMFS6H801NL

NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V

 3.2. Size:98K  onsemi
 ntmfs6h801n.pdf

NTMFS6H801NL NTMFS6H801NL

NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V

 5.1. Size:194K  onsemi
 ntmfs6h800nl.pdf

NTMFS6H801NL NTMFS6H801NL

NTMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol V

 5.2. Size:179K  onsemi
 ntmfs6h800n.pdf

NTMFS6H801NL NTMFS6H801NL

NTMFS6H800NMOSFET Power, Single,N-Channel80 V, 2.1 mW, 203 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 2.1 mW @ 10 V 203 AMAXIMUM RATINGS (TJ = 25C unless other

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