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NTTFS003N04C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTTFS003N04C
   Маркировка: 03NC
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 69 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 103 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 23 nC
   Время нарастания (tr): 47 ns
   Выходная емкость (Cd): 830 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
   Тип корпуса: WDFN8

 Аналог (замена) для NTTFS003N04C

 

 

NTTFS003N04C Datasheet (PDF)

 ..1. Size:196K  onsemi
 nttfs003n04c.pdf

NTTFS003N04C NTTFS003N04C

NTTFS003N04CMOSFET Power, Single,N-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 3.5 mW @ 10 V 103 AMAXIMUM RATINGS (TJ = 25C unless otherw

 7.1. Size:205K  onsemi
 nttfs004n04c.pdf

NTTFS003N04C NTTFS003N04C

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis

 7.2. Size:193K  onsemi
 nttfs005n04c.pdf

NTTFS003N04C NTTFS003N04C

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val

 7.3. Size:188K  onsemi
 nttfs008n04c.pdf

NTTFS003N04C NTTFS003N04C

NTTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(on) MAX ID MAXParameter Symbol Val

 7.4. Size:355K  onsemi
 nttfs002n04cl.pdf

NTTFS003N04C NTTFS003N04C

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth

 7.5. Size:272K  onsemi
 nttfs002n04c.pdf

NTTFS003N04C NTTFS003N04C

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other

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