NTTFS020N06C - описание и поиск аналогов

 ..1. Size:198K  onsemi
 nttfs020n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 20.3 mW, 27 A NTTFS020N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 20.3 mW @ 10 V 27 A Typica

 7.1. Size:141K  onsemi
 nttfs024n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NTTFS024N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 22.6 mW @ 10 V 24 A Typica

 8.1. Size:205K  onsemi
 nttfs004n04c.pdf 

NTTFS004N04C MOSFET Power, Single, N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 4.9 mW @ 10 V 77 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

 8.2. Size:201K  onsemi
 nttfs015p03p8z.pdf 

NTTFS015P03P8Z MOSFET Power, Single, P-Channel, m8FL -30 V, 7.5 mW Features www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.5 mW @ -10 V Compliant -30 V -47.6 A 12 mW @ -4.5 V

 8.3. Size:193K  onsemi
 nttfs005n04c.pdf 

NTTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Val

 8.4. Size:139K  onsemi
 nttfs016n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NTTFS016N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 16.3 mW @ 10 V 32 A Typica

 8.5. Size:199K  onsemi
 nttfs030n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 29.7 mW, 19 A NTTFS030N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 29.7 mW @ 10 V 19 A Typica

 8.6. Size:188K  onsemi
 nttfs008n04c.pdf 

NTTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(on) MAX ID MAX Parameter Symbol Val

 8.7. Size:196K  onsemi
 nttfs003n04c.pdf 

NTTFS003N04C MOSFET Power, Single, N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 3.5 mW @ 10 V 103 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 8.8. Size:199K  onsemi
 nttfs015n04c.pdf 

NTTFS015N04C MOSFET Power, Single, N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 17.3 mW @ 10 V 27 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 8.9. Size:355K  onsemi
 nttfs002n04cl.pdf 

NTTFS002N04CL MOSFET Power, Single, N-Channel 40 V, 2.2 mW, 142 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 2.2 mW @ 10 V 40 V 142 A MAXIMUM RATINGS (TJ = 25 C unless oth

 8.10. Size:387K  onsemi
 nttfs010n10mcl.pdf 

NTTFS010N10MCL MOSFET, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 50 A, 10.6 mW www.onsemi.com General Description This N-Channel POWETRENCH MOSFET is produced using ELECTRICAL CONNECTION ON Semiconductor s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been S D optimized to minimize on-state resistance and yet maintain superior

 8.11. Size:272K  onsemi
 nttfs002n04c.pdf 

NTTFS002N04C MOSFET Power, Single, N-Channel 40 V, 2.4 mW, 136 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 2.4 mW @ 10 V 136 A MAXIMUM RATINGS (TJ = 25 C unless other