NTTFS5D1N06HL datasheet, подбор замены

 ..1. Size:298K  onsemi
 nttfs5d1n06hl.pdf 

MOSFET - Power, N-Channel, Shielded Gate 60 V, 5.2 mW, 78 A NTTFS5D1N06HL General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state ELECTRICAL CONNECTION resistance and yet maintain superior switching performance with best in c

 8.1. Size:107K  1
 nttfs5820nltag.pdf 

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 8.2. Size:124K  1
 nttfs5116pltag.pdf 

NTTFS5116PL MOSFET Power -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 52 mW @ -10 V Load Switches -60 V -20 A DC Motor Control 72 mW @ -4.5 V DC-DC Conversion P-Channel MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8

 8.3. Size:76K  1
 nttfs5c454nltag.pdf 

NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C

 8.4. Size:108K  1
 nttfs5826nltag.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 8.5. Size:147K  onsemi
 nttfs5c670nl.pdf 

NTTFS5C670NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi

 8.6. Size:107K  onsemi
 nttfs5820nltag.pdf 

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 8.7. Size:139K  onsemi
 nttfs5c658nl.pdf 

NTTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 5.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V

 8.8. Size:108K  onsemi
 nttfs5826nl.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 8.9. Size:199K  onsemi
 nttfs5c478nl.pdf 

MOSFET Power, Single N-Channel 40 V, 14 mW, 26 A NTTFS5C478NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 14 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40

 8.10. Size:76K  onsemi
 nttfs5c454nl.pdf 

NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C

 8.11. Size:269K  onsemi
 nttfs5c471nl.pdf 

 8.12. Size:111K  onsemi
 nttfs5116pl-d.pdf 

NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching http //onsemi.com These Devices are Pb-Free and are RoHS Compliant Applications V(BR)DSS RDS(on) MAX ID MAX Load Switches 52 mW @ -10 V DC Motor Control -60 V -20 A 72 mW @ -4.5 V DC-DC Conversion MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) P-Channel MOSFET Parameter

 8.13. Size:111K  onsemi
 nttfs5811nl.pdf 

NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.7 mW @ 10 V 40 V 53 A 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 40

 8.14. Size:100K  onsemi
 nttfs5cs70nl.pdf 

NTTFS5CS70NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi

 8.15. Size:143K  onsemi
 nttfs5c680nl.pdf 

NTTFS5C680NL MOSFET - Power, Single N-Channel 60 V, 26.5 mW, 20 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 26.5 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6

 8.16. Size:144K  onsemi
 nttfs5c673nl.pdf 

NTTFS5C673NL Power MOSFET 60 V, 9.3 mW, 50 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 9.3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C u

 8.17. Size:110K  onsemi
 nttfs5820nl.pdf 

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 8.18. Size:111K  onsemi
 nttfs5826nl-d.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 8.19. Size:118K  onsemi
 nttfs5c466nl.pdf 

MOSFET Power, Single, N-Channel 40 V, 7.3 mW, 51 A NTTFS5C466NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 7.3 mW @ 10 V 40 V 51 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 8.20. Size:200K  onsemi
 nttfs5c460nl.pdf 

NTTFS5C460NL MOSFET Power, Single, N-Channel 40 V, 4.8 mW, 74 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.8 mW @ 10 V 40 V 74 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 8.21. Size:107K  onsemi
 nttfs5811nltag.pdf 

NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.7 mW @ 10 V 40 V 53 A 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 40

 8.22. Size:107K  onsemi
 nttfs5116pltag.pdf 

NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching http //onsemi.com These Devices are Pb-Free and are RoHS Compliant Applications V(BR)DSS RDS(on) MAX ID MAX Load Switches 52 mW @ -10 V DC Motor Control -60 V -20 A 72 mW @ -4.5 V DC-DC Conversion MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) P-Channel MOSFET Parameter

 8.23. Size:124K  onsemi
 nttfs5116pl.pdf 

NTTFS5116PL MOSFET Power -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 52 mW @ -10 V Load Switches -60 V -20 A DC Motor Control 72 mW @ -4.5 V DC-DC Conversion P-Channel MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8

 8.24. Size:108K  onsemi
 nttfs5826nltag.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 8.25. Size:144K  onsemi
 nttfs5c453nl.pdf 

NTTFS5C453NL Power MOSFET 40 V, 3 mW, 107 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unle