Справочник MOSFET. NVD5C668NL

 

NVD5C668NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVD5C668NL
   Маркировка: 5C668L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 18.7 nC
   trⓘ - Время нарастания: 74 ns
   Cossⓘ - Выходная емкость: 580 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0089 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NVD5C668NL

 

 

NVD5C668NL Datasheet (PDF)

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NVD5C668NL NVD5C668NL

NVD5C668NLPower MOSFET60 V, 8.9 mW, 49 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 ..2. Size:286K  inchange semiconductor
 nvd5c668nl.pdf

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isc N-Channel MOSFET Transistor NVD5C668NLFEATURESDrain Current : I = 49A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

 8.2. Size:86K  onsemi
 nvd5c632nl.pdf

NVD5C668NL NVD5C668NL

NVD5C632NLPower MOSFET60 V, 2.5 mW, 155 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID2.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 8.3. Size:226K  onsemi
 nvd5c648nl.pdf

NVD5C668NL NVD5C668NL

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

 8.4. Size:191K  onsemi
 nvd5c688nl.pdf

NVD5C668NL NVD5C668NL

NVD5C688NLPower MOSFET60 V, 27.4 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID27.4 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise note

 8.5. Size:265K  inchange semiconductor
 nvd5c648nl.pdf

NVD5C668NL NVD5C668NL

isc N-Channel MOSFET Transistor NVD5C648NLFEATURESDrain Current I = 89A@ T =25D CDrain Source Voltage-V = 60V(Min)DSSStatic Drain-Source On-ResistanceR :4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

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