NVMFD5C478N - аналоги, параметры транзистора - Справочник транзисторов

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NVMFD5C478N Power MOSFET 40 V, 17.0 mW, 27 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

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NVMFD5C478NL Power MOSFET 40 V, 14.5 mW, 29 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co

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NVMFD5C470N MOSFET Power, Dual N-Channel 40 V, 11.7 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

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NVMFD5C470NL MOSFET Power, Dual N-Channel 40 V, 11.5 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 11.5 mW @ 10 V 40 V AEC-Q101 Qualified

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