MOSFET Power, Single,N-Channel80 V, 2.8 mW, 157 ANVMFS6H801NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H801NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 2.8 mW @ 10 V 157 A AEC-Q101 Quali

MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANVMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H801NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection2.7 mW @ 10 V AEC-Q101 Qualified and PPA

NVMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6H800NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable The

MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali

MOSFET - Power, SingleN-Channel80 V, 4.5 mW, 107 ANVMFS6H824NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie

NVMFS6H818NMOSFET Power, SingleN-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H818NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 3.7 mW @ 10 V 123 A AEC-Q101 Qualif

MOSFET - Power, SingleN-Channel80 V, 9.4 mW, 64 ANVMFS6H848NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 9.4 mW @ 10 V 64 A AEC-Q101 Qualified

MOSFET - Power, SingleN-Channel80 V, 14.2 mW, 43 ANVMFS6H852NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie

MOSFET - Power, SingleN-Channel80 V, 32 mW, 23 ANVMFS6H864NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H864NWF - Wettable Flank Option for Enhanced Optical80 V 32 mW @ 10 V 23 AInspection AEC-Q101 Qualified an

MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANVMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H818NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection3.2 mW @ 10 V AEC-Q101 Qualified and PPA

MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANVMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NLWF - Wettable Flank Option for Enhanced OpticalInspection6.2 mW @ 10 V80 V77 A AEC-Q101 Qualif

MOSFET - Power, SingleN-Channel80 V, 6.7 mW, 80 ANVMFS6H836NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 6.7 mW @ 10 V 80 A AEC-Q101 Qualified

MOSFET - Power, SingleN-Channel80 V, 4 mW, 110 ANVMFS6H824NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H824NLWF - Wettable Flank Option for Enhanced OpticalInspection4 mW @ 10 V80 V 110 A AEC-Q101 Qualified

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVMFS6H864NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection29 mW @ 10 V AEC-Q101 Qualified and PPAP C

MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANVMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection8.8 mW @ 10 V AEC-Q101 Qualified and PPAP

MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANVMFS6H852NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced OpticalInspection13.1 mW @ 10 V80 V 42 A AEC-Q101 Quali

MOSFET - Power, SingleN-Channel80 V, 20.7 mW, 32 ANVMFS6H858NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie