NVTFS016N06C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVTFS016N06C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 32 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 1.7 ns
Cossⓘ - Выходная емкость: 319 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0163 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS016N06C
NVTFS016N06C Datasheet (PDF)
nvtfs016n06c.pdf

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-
nvtfs010n10mcl.pdf

NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8
nvtfs015n04c.pdf

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These
nvtfs014p04m8l.pdf

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D
Другие MOSFET... NVTFS002N04CL , NVTFS003N04C , NVTFS004N04C , NVTFS005N04C , NVTFS008N04C , NVTFS010N10MCL , NVTFS014P04M8L , NVTFS015N04C , MMD60R360PRH , NVTFS020N06C , NVTFS024N06C , NVTFS030N06C , NVTFS052P04M8L , NVTFS5C453NL , NVTFS5C454NL , NVTFS5C460NL , NVTFS5C466NL .
History: AP75T10GP | HGP130N12SL | 2SK655 | PM516BZ | NCEP40P65QU | P5015BD
History: AP75T10GP | HGP130N12SL | 2SK655 | PM516BZ | NCEP40P65QU | P5015BD



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