Аналоги NVTFS5C673NL. Основные параметры
Наименование производителя: NVTFS5C673NL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 450 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0098 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS5C673NL
NVTFS5C673NL даташит
nvtfs5c673nl.pdf
NVTFS5C673NL Power MOSFET 60 V, 9.8 mW, 50 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c670nl.pdf
NVTFS5C670NL Power MOSFET 60 V, 6.8 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c680nl.pdf
NVTFS5C680NL MOSFET Power, Single N-Channel 60 V, 26.5 mW, 20 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product 26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 20 A The
nvtfs5c658nl.pdf
NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 5.0 mW @ 10 V These Devices are Pb
Другие MOSFET... NVTFS5C453NL , NVTFS5C454NL , NVTFS5C460NL , NVTFS5C466NL , NVTFS5C471NL , NVTFS5C478NL , NVTFS5C658NL , NVTFS5C670NL , IRF540N , NVTFS5C680NL , NVTFS6H850N , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , NVTFS6H880N .
Список транзисторов
Обновления
MOSFET: APG045N85 | APG042N01D | APG038N01G | APG035N04Q | APG032N04G | APG028N10 | APG024N04G | APG022N06G | APG020N01GD | APG013N04G | APG011N04G | APG011N03G | APC65R190FM | APC60R030WMF | AP9N20K | AP9565K
Popular searches
irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134 | 60r190p datasheet | cs30n20 datasheet





