PSA13N50 PSP13N50 500V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 500V 0.40 13A RDS(ON),typ.=0.40 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power Ordering Information Part Number Package Brand PSA13N50 TO-220F PSP13N50 TO-220

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA13/DDarlington TransistorsMPSA13NPN SiliconMPSA14**Motorola Preferred DeviceCOLLECTOR 3BASE2EMITTER 1123MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 10 V

MPSA13 MMBTA13 PZTA13CCEECBC TO-92BSOT-23BSOT-223EMark: 1MNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter

MCCMPSA13TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMPSA14CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 1.5Watts of Power Dissipation.NPN Silicon Collector-current 500mA Collector-base Voltage 30VDarlington Transistor Operating and storage junction temperature range: -55OC to +150OC

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON TRANSISTOR1DESCRIPTIONTO-92The UTC MPSA13 is a darlington transistor.1FEATURES*Collector-Emitter Voltage: Vces = 30VSOT-89*Collector Dissipation : Pc ( mas ) = 625 mW1SOT-23 TO-92 1:EMITTER 2:BASE 3:COLLECTOR SOT-89 1:EMITTER 2:COLLECTOR 3:BASE SOT-23 1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Oper

MPSA13 / 14NPN Epitaxial Silicon TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92 FEATURES Darlington TRANSISTOR1 Power dissipation 23 PCM: 0.625 W (Tamb=25) 1 2 3 Collector current 1. EMITTER ICM: 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO: 30 V Operating and storage junction temperature range

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13MPSA 14TO-92CBECCBBEEABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCES 30 VCollector -Base Voltage VCBO 30 VEmitter -Base Voltage VEBO 10 VCollector Current -Continuous IC 500 mAPower D

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA13 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE Darlington Transistors3.COLLECTOR Equivalent Circuit MPSA13=Device code MPS Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

SEMICONDUCTOR MPSA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.B CN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollector-Base Voltage 30 VK 0.55 MAXF FL 2.30VCESCollecto

MPSA13/MPSA14Plastic-Encapsulate TransistrosNPN Darlington Transistor1. EMITTER2. BASE 3. COLLECTOR1 2 3 TO-92Maximum Ratings(TA=25 C Unless O therwise Specified)Rating Symbol Value UnitVCEOCollector-Emitter Voltage 30V VCBOCollector-base Voltage 30 V VEBO10 V Emitter-base Voltage mACollector Current IC 500 Total Power Dissipation(TA=25C) 0.625PD W

SEMICONDUCTORMPSA13TECHNICAL DATAMPSA13 TRANSISTOR (NPN) B CFEATURES Darlington Transistors DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50Symbol Parameter Value UnitsL 2.30F FVCBO Collector-Base Voltage 30 V M 0.51 MAXVCEO Collector-Emitter V