Справочник MOSFET. 2SK2136

 

2SK2136 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2136
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 540 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO220

 Аналог (замена) для 2SK2136

 

 

2SK2136 Datasheet (PDF)

 ..1. Size:447K  1
2sk2136.pdf

2SK2136
2SK2136

 8.1. Size:419K  1
2sk2132.pdf

2SK2136
2SK2136

 8.2. Size:435K  1
2sk2135.pdf

2SK2136
2SK2136

 8.3. Size:124K  1
2sk2137.pdf

2SK2136
2SK2136

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2137SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2137 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-Resistance2SK2137: RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis

 8.4. Size:379K  1
2sk2131.pdf

2SK2136
2SK2136

 8.5. Size:135K  1
2sk2138 2sk2138-z.pdf

2SK2136
2SK2136

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2138, 2SK2138-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 2.4 MAX.

 8.6. Size:71K  renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

2SK2136
2SK2136

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:54K  nec
2sk2134.pdf

2SK2136
2SK2136

 8.8. Size:111K  nec
2sk2139.pdf

2SK2136
2SK2136

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis

 8.9. Size:361K  nec
2sk2133-z.pdf

2SK2136
2SK2136

 8.10. Size:421K  nec
2sk2134-z.pdf

2SK2136
2SK2136

 8.11. Size:31K  panasonic
2sk2130.pdf

2SK2136
2SK2136

Power F-MOS FETs 2SK21302SK2130Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 45nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive

 8.12. Size:33K  hitachi
2sk213 2sk214 2sk215 2sk216.pdf

2SK2136
2SK2136

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

Другие MOSFET... 2SK2110 , 2SK2111 , 2SK2112 , 2SK2131 , 2SK2132 , 2SK2133 , 2SK2134 , 2SK2135 , IRF2807 , 2SK2137 , 2SK2138 , 2SK2139 , 2SK2140 , 2SK2141 , 2SK2157 , 2SK2158 , 2SK2159 .

 

 
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