RU20P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -20V/-4A,S RDS (ON) =35m(Typ.)@VGS=-4.5V RDS (ON) =45m(Typ.)@VGS=-2.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and Rugged Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DDDDDDDApplicationspp Load S

RU20P4CP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -20V/-4A,RDS (ON) =40m (Typ.) @ VGS=-4.5VRDS (ON) =55m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23-3 Lead Free and Green AvailableApplications Power Management Load SwitchP-Channel MOSFETAbsolute Maximum RatingsSymbolParam

RU20P4Cwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

RU20P7CP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =20m(Typ.)@VGS=-4.5VD RDS (ON) =30m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3DDDDDDDApplicationspp Load Switch

RU20P18LP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-18A, RDS (ON) =30m(Typ.)@VGS=-4.5V D RDS (ON) =45m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS Compliant)STO252DAp

RU20P5EP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =50m(Typ.)@VGS=-4.5V RDS (ON) =65m(Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SDGSOT89DApplications Load Switch Power ManagementGSP-Channel MOSFETAbsolute M

RU20P3BP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -20V/-3A,RDS (ON) =80m (Typ.) @ VGS=-4.5VRDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23 Lead Free and Green AvailableApplications Power Management Load SwitchP-Channel MOSFETAbsolute Maximum RatingsSymbolParame

RU20P3CP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-3A,RDS (ON) =110m(Typ.)@VGS=-4.5VDRDS (ON) =150m(Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-ResistanceE ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching LossG Lead Free and Green Devices (RoHS Compliant)SSO

RU20P7C-IP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =20m(Typ.)@VGS=-4.5VD RDS (ON) =30m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3Applications Load Switch Power Management Battery ProtectionP-Cha

RU20P2BP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-2.4A, RDS (ON) =95m(Typ.)@VGS=-4.5VD RDS (ON) =140m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFETAbsolute Maximum RatingsS

RU20P3Bwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS